John Lin
42Patents
9h-index
45Co-inventors
75Inventor score
Filing activity: Dec 28, 1994 → Apr 23, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6900101B2 | LDMOS transistors and methods for making the same | Electricity | 66 | Expired |
| US6261728A | Mask image scanning exposure method | Physics | 60 | Expired |
| US5700731A | Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells | Electricity | 58 | Expired |
| US5736988A | Apparatus and method for accelerated tiled data retrieval | Physics | 31 | Expired |
| US6133613A | Anti-reflection oxynitride film for tungsten-silicide substrates | Electricity | 27 | Expired |
| US5657479A | Hierarchical display list processing in graphics data retrieval system | Physics | 26 | Expired |
| US5717695A | Output pin for selectively outputting one of a plurality of signals internal to a semiconductor chip according to a programmable register for diagnostics | Electricity | 22 | Expired |
| US6148479A | Hinge | Fixed Constructions | 19 | Expired |
| US6486939B2 | Electronically controlled universal phase-shifting mask for stepper exposure system | Physics | 18 | Expired |
| US7141455B2 | Method to manufacture LDMOS transistors with improved threshold voltage control | Electricity | 8 | Expired |
| US6471157B1 | Device and method for reducing aircraft noise | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7262109B2 | Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor | Electricity | 8 | Expired |
| US5524323A | Hinge structure | Fixed Constructions | 8 | Expired |
| US7195965B2 | Premature breakdown in submicron device geometries | Electricity | 6 | Expired |
| US7696049B2 | Method to manufacture LDMOS transistors with improved threshold voltage control | Electricity | 6 | Active |
| US8695925B2 | Elastically deformable side-edge link for trailing-edge flap aeroacoustic noise reduction | Emerging Cross-Sectional Technologies | 6 | Active |
| US7417270B2 | Distributed high voltage JFET | Electricity | 5 | Expired |
| US8754469B2 | Hybrid active-field gap extended drain MOS transistor | Electricity | 5 | Active |
| US8853029B2 | Method of making vertical transistor with graded field plate dielectric | Electricity | 4 | Active |
| US6815276B2 | Segmented power MOSFET of safe operation | Electricity | 4 | Expired |
| US7846789B2 | Isolation trench with rounded corners for BiCMOS process | Electricity | 4 | Active |
| US10358208B2 | Hybrid flow control method for simple hinged flap high-lift system | Emerging Cross-Sectional Technologies | 3 | Active |
| US8878330B2 | Integrated high voltage divider | Electricity | 3 | Active |
| US6878999B2 | Transistor with improved safe operating area | Electricity | 3 | Expired |
| US7605412B2 | Distributed high voltage JFET | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.