High breakdown voltage semiconductor device
US6133617A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1999 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Sep 10, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/928
Abstract
Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.