Flash memory array
US6134144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A novel flash memory array has an array of memory cells with each memory cell being of a floating gate memory transistor with a plurality of terminals. The memory cells are arranged in a plurality of rows and a plurality of columns, with a word line connecting the memory cells in the same row. A row decoder is positioned adjacent one side of the memory array and is connected to the plurality of word lines for receiving an address signal and for supplying a low voltage signal. A plurality of programming lines are connected to the plurality of rows of memory cells of the array with a programming line connected to the memory cells in the same row. The plurality of programming lines are collinear with but spaced apart from the plurality of word lines and extending only to the row decoder. A high voltage generating circuit is positioned adjacent the other side of the array, opposite the one side, and connected to the plurality of programming lines for receiving the address signal and for supplying a high voltage signal to the plurality of programming lines in response thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.