Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
US6136641A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1998 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Aug 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600.degree. C. using H.sub.2 gas or H.sub.2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.