Method of increasing contact area of a contact window
US6136698A · kind A · utility
7Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 1999 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Jun 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided to increase the contact area of a contact window. In this method, the contact area is mainly increased by a concavity which is formed by first forming a thin oxide layer in the contact region using local oxidation, then further by removing the thin oxide layer. Additionally, in order to reduce the contact resistance, a metal oxide layer can be selectively formed at the contact interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.