Focused ion beam source method and apparatus
US6137110A · kind A · utility
15Cited by
15References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1998 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Aug 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.