Thorsten Lill
106Patents
20h-index
144Co-inventors
93Inventor score
Filing activity: Apr 17, 1998 → May 21, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6924191B2 | Method for fabricating a gate structure of a field effect transistor | Electricity | 409 | Expired |
| US6081334A | Endpoint detection for semiconductor processes | Electricity | 157 | Expired |
| US9431268B2 | Isotropic atomic layer etch for silicon and germanium oxides | Electricity | 126 | Active |
| US6074954A | Process for control of the shape of the etch front in the etching of polysilicon | Electricity | 99 | Expired |
| US6583065B1 | Sidewall polymer forming gas additives for etching processes | Electricity | 65 | Expired |
| US9576811B2 | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) | Electricity | 59 | Active |
| US9806252B2 | Dry plasma etch method to pattern MRAM stack | Electricity | 54 | Active |
| US8382999B2 | Pulsed plasma high aspect ratio dielectric process | Electricity | 51 | Active |
| US9257638B2 | Method to etch non-volatile metal materials | Electricity | 51 | Active |
| US9034199B2 | Ceramic article with reduced surface defect density and process for producing a ceramic article | Emerging Cross-Sectional Technologies | 47 | Active |
| US6406924B1 | Endpoint detection in the fabrication of electronic devices | Electricity | 43 | Expired |
| US9805941B2 | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) | Electricity | 41 | Active |
| US9130158B1 | Method to etch non-volatile metal materials | Electricity | 34 | Active |
| US6872322B1 | Multiple stage process for cleaning process chambers | Electricity | 30 | Expired |
| US9870899B2 | Cobalt etch back | Chemistry; Metallurgy | 30 | Active |
| US9406535B2 | Ion injector and lens system for ion beam milling | Electricity | 27 | Active |
| US6905800B1 | Etching a substrate in a process zone | Electricity | 25 | Expired |
| US6518190B1 | Plasma reactor with dry clean apparatus and method | Electricity | 22 | Expired |
| US9536748B2 | Use of ion beam etching to generate gate-all-around structure | Electricity | 21 | Active |
| US6399507B1 | Stable plasma process for etching of films | Electricity | 20 | Expired |
| US6827869B2 | Method of micromachining a multi-part cavity | Performing Operations; Transporting | 20 | Expired |
| US6824813B1 | Substrate monitoring method and apparatus | Physics | 20 | Expired |
| US9779955B2 | Ion beam etching utilizing cryogenic wafer temperatures | Electricity | 20 | Active |
| US10096487B2 | Atomic layer etching of tungsten and other metals | Emerging Cross-Sectional Technologies | 19 | Active |
| US10374144B2 | Dry plasma etch method to pattern MRAM stack | Electricity | 18 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.