Electron beam exposure method and apparatus
US6137113A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Feature information used for forming a pattern by exposure is detected on the basis of the input pattern data, so as to determine the minimum deflection width and electron beam diameter. The input pattern data is broken up in units of subfields serving as exposure fields. The reference position of a main deflector upon exposing one selected subfield is determined. Pattern data for the selected subfield is segmented into those in units of elementary electron optical systems, and the ON/OFF pattern of the electron beams to be irradiated is determined in units of predetermined matrix elements. The numbers of electron beams to be simultaneously irradiated are detected in units of matrix elements, and the current density is determined based on the maximum value of the detected numbers. The exposure time at each deflection position is calculated based on the calculated current density, thus determining a deflection cycle that can attain exposure within the shortest period of time. By appropriately setting the current density of the electron beams, maximum throughput with shortest process time can be attained while confining blurring produced by the Coulomb effect within a predetermined v…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.