Capacitor over bit line structure using a straight bit line shape
US6137130A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 6, 1999 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Dec 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A method of creating a capacitor over bit line structure, used for high density, DRAM designs, has been developed. The process consists of creating a straight bit line shape, connected to an underlying polysilicon contact plug structure, which in turn contacts an underlying source and drain region. A storage node contact hole is opened through insulator layers and through the straight bit line shape. After passivation of the storage node contact hole with silicon nitride spacers, a storage node structure is formed on an overlying insulator layer, as well as in the storage node contact hole, overlying and contacting another polysilicon contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.