Integrated SCR-LDMOS power device

US6137140A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Taylor R. Efland · Richardson, US
• Stephen C. Kwan · Dublin, US
• Kenneth G. Buss · Dallas, US
• Chin-Yu Tsai · Plano, US

Key dates

• Filing date: Nov 20, 1998
• Grant date: Oct 24, 2000
• Expiry date: Nov 20, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/403

Abstract

An integrated SCR-LDMOS device (10) having a p+ region (13) in the drain region (12), but otherwise similar to a conventional LDMOS transistor. The device (10) may be implemented as a modification of a non-planar LDMOS (FIGS. 1 and 2). An alternate embodiment, device (30), may be implemented as a modification of a planar LDMOS (FIG. 3). In either case, the added p+ region (13, 37) provides the device (10, 30) with two parasitic bipolar transistors in an SCR configuration (FIGS. 4A and 4B).