Inventor · Plano, TX, US

Chin-Yu Tsai

25Patents
10h-index
29Co-inventors
75Inventor score

Filing activity: Nov 20, 1998 → Jul 17, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6137140A Integrated SCR-LDMOS power device Electricity 104 Expired
US6424005B1 LDMOS power device with oversized dwell Electricity 94 Expired
US6512280B2 Integrated CMOS structure for gate-controlled buried photodiode Electricity 72 Expired
US6441431B1 Lateral double diffused metal oxide semiconductor device Electricity 43 Expired
US6548874B1 Higher voltage transistors for sub micron CMOS processes Electricity 43 Expired
US6392263B1 Integrated structure for reduced leakage and improved fill-factor in CMOS pixel Electricity 20 Expired
US6729886B2 Method of fabricating a drain isolated LDMOS device Electricity 18 Expired
US6468849B1 Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology Electricity 15 Expired
US6753575B2 Tank-isolated-drain-extended power device Electricity 13 Expired
US6680226B2 Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology Electricity 10 Expired
US6413824B1 METHOD TO PARTIALLY OR COMPLETELY SUPPRESS POCKET IMPLANT IN SELECTIVE CIRCUIT ELEMENTS WITH NO ADDITIONAL MASK IN A CMOS FLOW WHERE SEPARATE MASKING STEPS ARE USED FOR THE DRAIN EXTENSION IMPLANTS FOR THE LOW VOLTAGE AND HIGH VOLTAGE TRANSISTORS Electricity 8 Expired
US6274918A Integrated circuit diode, and method for fabricating same Electricity 5 Expired
US6753202B2 CMOS photodiode having reduced dark current and improved light sensitivity and responsivity Electricity 5 Expired
US6784493B2 Line self protecting multiple output power IC architecture Electricity 5 Expired
US6621064B2 CMOS photodiode having reduced dark current and improved light sensitivity and responsivity Electricity 3 Expired
US6770935B2 Array of transistors with low voltage collector protection Electricity 2 Expired
US6709900B2 Method of fabricating integrated system on a chip protection circuit Electricity 2 Expired
US9608109B1 N-channel demos device Electricity 2 Active
US10756187B1 Extended drain MOS with dual well isolation Electricity 0 Active
US6806541B2 Field effect transistor with improved isolation structures Electricity 0 Expired
US11387323B2 Extended drain MOS with dual well isolation Electricity 0 Active
US6730569B2 Field effect transistor with improved isolation structures Electricity 0 Expired
US9947783B2 P-channel DEMOS device Electricity 0 Active
US10505037B2 P-channel DEMOS device Electricity 0 Active
US6710427B2 Distributed power device with dual function minority carrier reduction Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.