Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility
US6138606A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Apr 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound. In yet another preferred embodiment, the ion source apparatus employs an ion beam device for generating the dopant ion compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.