Peiching Ling
31Patents
12h-index
12Co-inventors
78Inventor score
Filing activity: Mar 1, 1994 → Aug 18, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5576680A | Structure and fabrication process of inductors on semiconductor chip | Electricity | 121 | Expired |
| US5871653A | Methods of manufacturing micro-lens array substrates for implementation in flat panel display | Electricity | 52 | Expired |
| US6842563B2 | Waveguide grating-based wavelength selective switch actuated by micro-electromechanical system | Electricity | 48 | Expired |
| US5763319A | Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility | Electricity | 43 | Expired |
| US7167616B2 | Grating-based wavelength selective switch | Physics | 33 | Expired |
| US8323748B2 | Methods for forming uniform particle layers of phosphor material on a surface | Electricity | 19 | Active |
| US6710358B1 | Apparatus and method for reducing energy contamination of low energy ion beams | Electricity | 16 | Expired |
| US8247248B2 | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure | Electricity | 15 | Active |
| US6628858B2 | Waveguide Bragg-grating based all-optical wavelength-routing switch with wavelength conversion | Electricity | 14 | Expired |
| US5863831A | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility | Electricity | 14 | Expired |
| US6138606A | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility | Electricity | 14 | Expired |
| US8399267B2 | Methods for packaging light emitting devices and related microelectronic devices | Electricity | 13 | Active |
| US5811852A | Memory cell structure fabricated with improved fabrication process by forming dielectric layer directly on an insulated surface of a substrate | Electricity | 12 | Expired |
| US6683711B2 | Wavelength selective light source using Bragg-grating | Electricity | 7 | Expired |
| US6323110A | Structure and fabrication process of silicon on insulator wafer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6876793B1 | Grating-based wavelength selective switch | Physics | 5 | Expired |
| US6579420B2 | Apparatus and method for uniformly depositing thin films over substrates | Chemistry; Metallurgy | 5 | Expired |
| US6891989B2 | Optical switch systems using waveguide grating-based wavelength selective switch modules | Electricity | 4 | Expired |
| US6608715B2 | Wavelength converter using Bragg-grating | Electricity | 3 | Expired |
| US8803185B2 | Light emitting diode package and method of fabricating the same | Electricity | 3 | Active |
| US7003190B2 | Switching matrix configuration for reducing loss | Electricity | 3 | Expired |
| US6801690B1 | Grating-based wavelength selective switch | Physics | 2 | Expired |
| US6973231B2 | Waveguide grating-based wavelength selective switch actuated by thermal mechanism | Electricity | 2 | Expired |
| US6109207A | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility | Electricity | 1 | Expired |
| US6931169B2 | Optical switch with reversible electroplating mirrors | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.