Method of producing a buried boss diaphragm structure in silicon
US6140143A · kind A · utility
10Cited by
22References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 10, 1992 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Feb 10, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.