Method for manufacturing semiconductor and method for manufacturing semiconductor device
US6140166A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1997 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Dec 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor, comprising crystallizing an amorphous silicon film formed on a substrate by employing lateral growth method using a catalyst element which accelerates the crystallization, wherein the duration of annealing accounts for 90% or more but less than 100% of the time for crystallization of the amorphous silicon film under the condition that no catalyst element is used. Also provided is a method for manufacturing a semiconductor, comprising: obtaining the equation which relates the annealing temperature to the duration of annealing in case crystallization of the amorphous silicon film initiates spontaneously; obtaining the equation which relates the annealing temperature to the laterally grown distance in case lateral growth method using a catalyst element for accelerating crystallization is applied to the amorphous silicon film formed on the substrate above; specifying the annealing duration and the annealing temperature which satisfy the relationship above for a desired growth distance; and performing annealing at a temperature not higher than said annealing temperature, and thereby laterally growing the amorphous silicon film by using a catal…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.