Method of forming a crown capacitor for a DRAM cell
US6140179A · kind A · utility
4Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The present invention discloses a method of forming a crown capacitor for a DRAM cell. An etching method having different selectivity between the BPSG and silicon oxynitride layer is applied to form a sacrificial structure with a concanovenex sidewall. Using the sacrificial structure as a mold, a high capacitance crown capacitor is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.