Low temperature process for post-etch defluoridation of metals
US6140243A · kind A · utility
22Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1997 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.