In-situ measurement method and apparatus for semiconductor processing
US6140833A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A measurement device for in-situ measurement of processing parameters, in accordance with the present invention, includes a semiconductor wafer having at least one processed chip formed thereon. The processed chip further includes at least one sensor for measuring process parameters. A memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor is also included. A timing device is provided for tracking the process parameters as a function of time, and a power supply is included for providing power to the at least one sensor, the memory storage device and the timing device. Also, a method is described for making measurements with the measurement device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.