Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US6141241A · kind A · utility
320Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Apr 12, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A universal memory element having multi-level, non-detectable states and methods and apparatus for programming the same, and methods and applications embodying the same in neural networks, artificial intelligence and data storage systems. The universal memory element is programmed by applying one or more sub-interval energy pulses insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify the memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.