Method and photoresist using a photoresist copolymer
US6143463A · kind A · utility
15Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 17, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a photoresist copolymer for DUV light, with which the fine patterns allowable for the high integration of semiconductor devices can be easily obtained in a microlithography process using DUV light. The copolymer is easily prepared by reacting at least two alicyclic olefins at a high temperature and at high pressure in the presence of an initiator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.