Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers
US6143477A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 8, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Sep 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of ashing or cleaning a wafer, including introducing oxygen gas into a reaction chamber having therein a semiconductor wafer to be ashed or cleaned, producing light of wavelength less than 190 nanometers by means of a first excimer lamp, and directing the light into the oxygen gas, causing generation of ozone gas. Light of wavelength greater than 190 nanometers is produced by means of a second excimer lamp and directed that light into the ozone gas, causing generation of an oxygen radical having a high absorption coefficient. Gas including the oxygen radical is passed along a surface of the wafer, causing degeneration of organic material thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.