Method for fabrication of a semiconductor sensor
US6143584A · kind A · utility
6Cited by
3References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Jul 24, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/124
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.