Passivation structure and its method of fabrication
US6143638A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel passivation structure and its method of fabrication. According to the present invention a first dielectric layer is formed upon a conductive layer formed over a substrate. The first dielectric layer and the conductive layer are then patterned into a first dielectric capped interconnect and a dielectric capped bond pad. Next, a second dielectric layer is formed over and between the dielectric capped interconnect and the dielectric capped bond pad. The top portion of the second dielectric layer is removed so as to expose the dielectric capped bond pad and the dielectric capped interconnect. A third dielectric layer is then formed over the exposed dielectric capped bond pad and the exposed dielectric capped interconnect and over the second dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.