Semiconductor device and its manufacture
US6144052A · kind A · utility
7Cited by
1References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Aug 31, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
An oriented polycrystal silicon film or an amorphous silicon film 52 is disposed on the whole area beneath a conductive diffusion barrier 61 under a lower electrode of a ferroelectric capacitor. As a result, the conductive diffusion barrier, the lower electrode and the capacitor ferroelectric film become oriented films; therefore, it is possible to reduce the signal variation in capacitors even in minute semiconductor devices, and obtain a highly reliable semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.