Semiconductor memory having differential bit lines
US6144590A · kind A · utility
4Cited by
8References
9Claims
0Family size
Assignee
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Key dates
| Filing date | May 20, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor memory, bit lines are disposed in such a way that in each case two inverted and two non-inverted bit lines lie next to one another. Adjacent switching transistors for connecting the bit lines to an inverted or a non-inverted collective line are connected to the corresponding collective line by a common contact. An advantage in terms of area is afforded by the fact that the two switching transistors have a common doping region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.