Cleaning gas
US6147006A · kind A · utility
10Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2000 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jan 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.