Method of LPCVD silicon nitride deposition
US6147013A · kind A · utility
15Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jan 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of LPCVD silicon nitride deposition for decreasing particles is disclosed. First, a silicon nitride layer is formed on a semiconductor substrate by LPCVD. Next, low gas flow rate purging step and cycle purging step are executed sequentially. Finally, the semiconductor substrate is taken out from the LPCVD tube. The key point of this invention is decreasing the gas flow rate of purging and cycle purging by inputting nitrogen gas slowly. Thereby the substrate surface contamination problem induced by conventional method can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.