Optoelectronic semiconductor component

US6147365A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Fischer · Mesa, US
• Thomas Litz · Würzburg, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Markus Keim · Ansbach, DE
• Thierry Baron · Pessac, FR
• Günter Reuscher · Würzburg, DE
• Gottfried Landwehr · Würzburg, DE

Key dates

• Filing date: Aug 2, 1999
• Grant date: Nov 14, 2000
• Expiry date: Aug 2, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3409
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.