Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6149730A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Oct 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate. The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.