Composition and method for reducing dishing in patterned metal during CMP process
US6149830A · kind A · utility
11Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | Sep 17, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Sep 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for reducing dishing in patterned large metal surfaces embedded in a dielectric as a workpiece during chemical mechanical polishing, comprising: a viscosity increasing amount of viscosity enhancer in replacement of a portion of deionized water in a slurry containing an abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.