Integrated circuit insulator
US6150010A · kind A · utility
6Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1997 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Mar 4, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/3154
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Intermetal level dielectrics comprise fluorinated polydimethylenenaphthalene derived from the following monomers wherein each of R.sub.1, R.sub.2, R.sub.3, and R.sub.4 is selected from the group consisting of H, F, and fluorocarbon groups ##STR1## The dielectric and oxides may be between metal lines. Fluorination of the polydimethylenenaphthalene lowers dielectric constant and increases working temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.