Method for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory device
US6150183A · kind A · utility
14Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide capacitor is manufactured by sequentially laminating a metal oxide film and a secon electrode on a first electrode. The metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.