Differential temperature control in chemical mechanical polishing processes
US6150271A · kind A · utility
19Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Sep 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The specification describes a method and apparatus for chemical-mechanical polishing (CMP) to produce planar layered semiconductor structures. Non-uniformities in polishing behavior due to radial temperature variations across the semiconductor wafer are compensated by locally controlling the temperature of the wafer. Heating/cooling is implemented by installing temperature controlling coils in the head of the wafer carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.