Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
US6150671A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.