Field effect semiconductor device having dipole barrier
US6150680A · kind A · utility
101Cited by
29References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Mar 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential barrier and a maximum electric field sufficient to confine electrons to the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.