Semiconductor device with filed-effect transistors of a complementary type and method of manufacturing the same
US6150685A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | May 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
Abstract
A semiconductor device prevents latch up and enables subminiaturization of its structure, and a method can manufacture the semiconductor device. In the semiconductor device containing field-effect transistors of a complementary type, an interconnection containing semiconductor having n-type impurity connects a p-type impurity diffusion region forming an emitter electrode of a parasitically formed bipolar transistor to an n-type impurity diffusion region electrically connected to a power supply line. Thereby, a pn junction operating as a rectifier element is formed at a contact region between a connection portion and the p-type impurity diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.