Motoi Ashida
26Patents
8h-index
22Co-inventors
75Inventor score
Filing activity: Mar 17, 1992 → Jun 7, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5952678A | SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same | Emerging Cross-Sectional Technologies | 66 | Expired |
| US5283455A | Thin film field effect element having an LDD structure | Electricity | 52 | Expired |
| US5262655A | Thin film field effect device having an LDD structure and a method of manufacturing such a device | Electricity | 36 | Expired |
| US6169313A | Static semiconductor memory device | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5635731A | SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5382807A | Field effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the same | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6853022B2 | Semiconductor memory device | Electricity | 13 | Expired |
| US7709874B2 | Semiconductor device having a split gate structure with a recessed top face electrode | Electricity | 8 | Active |
| US6069818A | Semiconductor memory device having storage nodes doped with first and second type impurities | Electricity | 7 | Expired |
| US6984859B2 | Semiconductor memory device with static memory cells | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8174062B2 | Semiconductor memory device and manufacturing method thereof | Electricity | 3 | Active |
| US5973987A | Semiconductor memory device delaying ATD pulse signal to generate word line activation signal | Physics | 3 | Expired |
| US6531747B1 | Semiconductor device | Electricity | 3 | Expired |
| US6150685A | Semiconductor device with filed-effect transistors of a complementary type and method of manufacturing the same | Electricity | 1 | Expired |
| US7038281B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Expired |
| US8248846B2 | Magnetic memory device, and manufacturing method thereof | Physics | 1 | Active |
| US7348637B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Expired |
| US7476581B2 | Method of manufacturing semiconductor device having dual gate electrode | Electricity | 0 | Active |
| US7485522B2 | Method of manufacturing semiconductor device having dual gate electrode | Electricity | 0 | Active |
| US9263113B2 | Semiconductor memory device with memory array and dummy memory array | Electricity | 0 | Active |
| US6849484B2 | Method of manufacturing semiconductor device | Electricity | 0 | Expired |
| US7145205B2 | Semiconductor device | Electricity | 0 | Expired |
| US7939448B2 | Semiconductor device having electrode and manufacturing method thereof | Electricity | 0 | Active |
| US7582550B2 | Semiconductor memory device and manufacturing method thereof | Electricity | 0 | Expired |
| US7816207B2 | Semiconductor device having electrode and manufacturing method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.