Structure of a capacitor section of a dynamic random-access memory
US6150690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
Capacitors are formed in the trenches made in an interlayer insulator made of silicon oxide. An insulating film (e.g., a silicon nitride film) is provided on the sides of each trench of the interlayer insulator. A storage electrode made of ruthenium or the like is provided in each trench of the interlayer insulator. A capacitor insulating film made of BSTO or the like is formed on the storage electrode. A plate electrode made of ruthenium or the like is formed on the capacitor insulating film. The plate electrode is common to all capacitors provided. Any two adjacent capacitors are electrically isolated by the interlayer insulator and the insulating film provided on the sides of the trenches of the interlayer insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.