Semiconductor apparatus having high withstand voltage
US6150697A · kind A · utility
82Cited by
24References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.