Lateral high-voltage semiconductor device having an outwardly extended electrode
US6150702A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.