Method for cleaning semiconductor wafers containing dielectric films
US6152148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.