Method of synthesizing cubic boron nitride films
US6153061A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1999 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming cubic phase boron nitride films in which a hexagonal boron nitride film target is positioned in front of an RF magnetron sputtering gun and is impacted with ions to cause atoms of boron and nitrogen to be sputtered away from the target and toward a substrate. At the same time, electrons are emitted into the system by an electron emitter, which electrons are attracted to the substrate as the boron and nitrogen atoms are being deposited on the substrate. The electrons cause the boron and nitrogen atoms to be reformed on the substrate as cubic phase boron nitride while suppressing the formation of other, less desirable forms of boron nitride films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.