Inventor · Boise, ID, US

Hongbin Zhu

91Patents
7h-index
96Co-inventors
75Inventor score

Filing activity: Feb 25, 1999 → Nov 28, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8173507B2 Methods of forming integrated circuitry comprising charge storage transistors Electricity 63 Active
US10090318B2 Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure Electricity 21 Active
US9595531B2 Aluminum oxide landing layer for conductive channels for a three dimensional circuit device Electricity 11 Active
US9431410B2 Methods and apparatuses having memory cells including a monolithic semiconductor channel Electricity 11 Active
US8030218B2 Method for selectively modifying spacing between pitch multiplied structures Electricity 9 Active
US9048194B2 Method for selectively modifying spacing between pitch multiplied structures Electricity 8 Active
US9659949B2 Integrated structures Electricity 8 Active
US10242995B2 Drain select gate formation methods and apparatus Electricity 7 Active
US10566336B1 Three-dimensional memory devices having through array contacts and methods for forming the same Electricity 6 Active
US9741734B2 Memory devices and systems having reduced bit line to drain select gate shorting and associated methods Electricity 5 Active
US11205659B2 Interconnect structures of three-dimensional memory devices Physics 5 Active
US10707121B2 Solid state memory device, and manufacturing method thereof Electricity 5 Active
US10134758B2 Memory devices and systems having reduced bit line to drain select gate shorting and associated methods Electricity 4 Active
US10038002B2 Semiconductor devices and methods of fabrication Electricity 3 Active
US9613973B2 Memory having a continuous channel Electricity 3 Active
US6153061A Method of synthesizing cubic boron nitride films Chemistry; Metallurgy 3 Expired
US8507384B2 Method for selectively modifying spacing between pitch multiplied structures Electricity 3 Active
US10090317B2 Methods and apparatuses having memory cells including a monolithic semiconductor channel Electricity 3 Active
USD1009664S1 Body fat scale General 2 Active
US10504859B2 Electronic component guard ring Electricity 2 Active
US10608004B2 Semiconductor devices and methods of fabrication Electricity 2 Active
US7476588B2 Methods of forming NAND cell units with string gates of various widths Electricity 2 Active
US11043505B2 Three-dimensional memory device having multi-deck structure and methods for forming the same Electricity 2 Active
US7898019B2 Semiconductor constructions having multiple patterned masking layers over NAND gate stacks Electricity 2 Active
US10269819B2 Integrated structures and methods of forming vertically-stacked memory cells Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.