Sputtering target and method for manufacturing thereof
US6153315A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Apr 14, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12993
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The surface roughness of a sputtering target is controlled and the amount of residual contaminants, the hydrogen content, and the thickness of a surface damage layer are reduced, in order to homogenize the thickness of a film formed on a substrate by sputtering and prevent and suppress nodule production to reduce particle production during sputtering. A sputtering target with the surface roughness (Ra) not more than 1.0 .mu.m, the total amount of contaminants, metal elements with a high melting point other than the major component and alloy components and Si, Al, Co, Ni, and B, not more that 500 ppm, the hydrogen content of the surface not more than 50 ppm, and the thickness of a surface damage layer not more than 50 .mu.m is provided, which is manufactured by precision machining, preferably, with the use of a diamond turning tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.