Hirohito Miyashita
22Patents
9h-index
13Co-inventors
72Inventor score
Filing activity: Mar 25, 1986 → Mar 20, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6759143B2 | Tantalum or tungsten target-copper alloy backing plate assembly and production method therefor | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6858116B2 | Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles | Electricity | 23 | Expired |
| US4666667A | High-strength, high-conductivity copper alloy | Chemistry; Metallurgy | 22 | Expired |
| US6153315A | Sputtering target and method for manufacturing thereof | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6793124B1 | Diffusion-joined target assemly of high-purity cobalt target and copper alloy backing plate and production method therefor | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7507304B2 | Copper alloy sputtering target and semiconductor element wiring | Electricity | 16 | Expired |
| US6723183B2 | Silicide target for depositing less embrittling gate oxide and method of manufacturing silicide target | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6582535B1 | Tungsten target for sputtering and method for preparing thereof | Performing Operations; Transporting | 13 | Expired |
| US8177947B2 | Sputtering target | Chemistry; Metallurgy | 10 | Active |
| US8246764B2 | Copper alloy sputtering target and semiconductor element wiring | Electricity | 9 | Active |
| US6875325B2 | Sputtering target producing few particles | Chemistry; Metallurgy | 7 | Expired |
| US7618505B2 | Target of high-purity nickel or nickel alloy and its producing method | Electricity | 6 | Active |
| US7138040B2 | Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode | Chemistry; Metallurgy | 5 | Expired |
| US7740718B2 | Target of high-purity nickel or nickel alloy and its producing method | Electricity | 4 | Expired |
| US9685307B2 | Sputtering target, sputtering target-backing plate assembly and deposition system | Electricity | 4 | Active |
| US7459036B2 | Hafnium alloy target and process for producing the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8262816B2 | Hafnium alloy target | Emerging Cross-Sectional Technologies | 2 | Active |
| US9472383B2 | Copper or copper alloy target/copper alloy backing plate assembly | Chemistry; Metallurgy | 2 | Active |
| US8241438B2 | Hafnium alloy target | Emerging Cross-Sectional Technologies | 2 | Active |
| US8062440B2 | Hafnium alloy target and process for producing the same | Emerging Cross-Sectional Technologies | 2 | Active |
| US9896745B2 | Copper alloy sputtering target and method for manufacturing the target | Electricity | 1 | Active |
| US10665462B2 | Copper alloy sputtering target and semiconductor element wiring | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.