Method for forming an isolation insulating film for internal elements of a semiconductor device
US6153481A · kind A · utility
2Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.