Methods for chemical mechanical polish of organic polymer dielectric films
US6153525A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer. In this way, the chemical mechanical polishing removal rate is increased compared to the removal rate for a fully cured polymer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.