Fabrication method for increasing the coupling efficiency of ETOX flash memory devices
US6153904A · kind A · utility
18Cited by
12References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Dec 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
A method of manufacturing an electron tunnel oxide (ETOX) flash memory device having an improved coupling efficiency includes sequentially forming a tunnel oxide, a floating gate, a dielectric layer, and a control gate on a substrate, where the tunnel oxide and the bottom of the floating gate are formed to be narrower than the top of the floating gate, the dielectric and the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.