Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby
US6153920A · kind A · utility
137Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jan 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such that the carbon atoms absorb point defects created in the substrate during device fabrication but do not adversely affect the leakage characteristics of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.