Conor S. Rafferty
30Patents
13h-index
35Co-inventors
81Inventor score
Filing activity: Apr 11, 1991 → Nov 14, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6153920A | Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby | Electricity | 137 | Expired |
| US10467926B2 | Conformal sensor systems for sensing and analysis | Electricity | 62 | Active |
| US9171794B2 | Embedding thin chips in polymer | Electricity | 52 | Active |
| US7629661B2 | Semiconductor devices with photoresponsive components and metal silicide light blocking structures | Electricity | 51 | Active |
| US6495474B1 | Method of fabricating a dielectric layer | Electricity | 49 | Expired |
| US9082025B2 | Conformal electronics integrated with apparel | Physics | 49 | Active |
| US7453129B2 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry | Electricity | 39 | Expired |
| US9583428B2 | Embedding thin chips in polymer | Electricity | 39 | Active |
| US9579040B2 | Electronics for detection of a condition of tissue | Human Necessities | 33 | Active |
| US8664739B2 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry | Electricity | 23 | Active |
| US7973377B2 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry | Electricity | 21 | Active |
| US5122479A | Semiconductor device comprising a silicide layer, and method of making the device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US10032709B2 | Embedding thin chips in polymer | Electricity | 15 | Active |
| US7643755B2 | Optical receiver comprising a receiver photodetector integrated with an imaging array | Electricity | 13 | Expired |
| US9846829B2 | Conformal electronics integrated with apparel | Physics | 13 | Active |
| US5670391A | Process for reducing transient diffusion of dopant atoms | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8648948B2 | Imaging systems with multiple imaging pixel types and related methods | Electricity | 5 | Active |
| US7288825B2 | Low-noise semiconductor photodetectors | Emerging Cross-Sectional Technologies | 4 | Expired |
| US10296819B2 | Conformal electronics integrated with apparel | Physics | 4 | Active |
| US7308160B2 | High speed semiconductor waveguide phase-shifter | Physics | 4 | Expired |
| US6146913A | Method for making enhanced performance field effect devices | Performing Operations; Transporting | 3 | Expired |
| US7589380B2 | Method for forming integrated circuit utilizing dual semiconductors | Electricity | 3 | Expired |
| US6632728B2 | Increasing the electrical activation of ion-implanted dopants | Electricity | 2 | Expired |
| US8294100B2 | Imaging apparatus and methods | Electricity | 2 | Active |
| US9142585B2 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.